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| LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor.The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace "T1" with "T3" in the Device Number to order the 13 inch/10,000 unit reel MMUN2111RLT1 MMUN2112RLT1 MMUN2113RLT1 MMUN2114RLT1 MMUN2115RLT1 MMUN2116RLT1 MMUN2130RLT1 MMUN2131RLT1 MMUN2132RLT1 MMUN2133RLT1 MMUN2134RLT1 PNP SILICON BIAS RESISTOR TRANSISTOR PIN1 base (Input) R1 R2 PIN3 Collector (output) 1 PIN2 Emitter (Ground) 2 3 CASE 318-08, STYLE 6 SOT- 23 (TO-236AB) MAXIMUM RATINGS (T A = 25C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ T A = 25C (1) Derate above 25C Symbol VCBO V CEO IC PD Value 50 50 100 200 1.6 Value 625 -65 to +150 260 10 Unit Vdc Vdc mAdc mW mW/C Unit C/W C C Sec THERMAL CHARACTERISTICS Rating Thermal Resistance -- Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol R JA T J , T stg TL DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) MMUN2111LT1 A6A 10 10 MMUN2112LT1 A6B 22 22 MMUN2113LT1 A6C 47 47 MMUN2114LT1 A6D 10 47 MMUN2115LT1 (2) A6E 10 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets. 8 Q1-1/7 LESHAN RADIO COMPANY, LTD. DEVICE MARKING AND RESISTOR VALUES (Continued) Device MMUN2116RLT1 (2) MMUN2130RLT1 (2) MMUN2131RLT1 (2) MMUN2132RLT1 (2) MMUN2133RLT1 (2) MMUN2134RLT1 (2) Characteristic Marking A6F A6G A6H A6J A6K A6L Symbol I CBO I CEO I EBO R1 (K) 4.7 1.0 2.2 4.7 4.7 22 Min 50 50 35 60 80 80 160 160 3.0 8.0 15 80 80 Typ 60 100 140 140 250 250 5.0 15 27 140 130 - MMUN2111RLT1 SERIES R2 (K) 1.0 2.2 4.7 47 47 Max 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.25 Unit nAdc nAdc mAdc ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB=50V, I E = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current MMUN2111RLT1 (VEB = 6.0 V, IC = 0) MMUN2112RLT1 MMUN2113RLT1 MMUN2114RLT1 MMUN2115RLT1 MMUN2116RLT1 MMUN2130RLT1 MMUN2131RLT1 MMUN2132RLT1 MMUN2133RLT1 MMUN2134RLT1 Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage(3)(IC=2.0mA, IB=0) V(BR)CBO V(BR)CEO hFE 8 Vdc Vdc Vdc ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) (3) MMUN2111RLT1 MMUN2112RLT1 MMUN2113RLT1 MMUN2114RLT1 MMUN2115RLT1 MMUN2116RLT1 MMUN2130RLT1 MMUN2131RLT1 MMUN2132RLT1 MMUN2133RLT1 MMUN2134RLT1 Collector-Emitter Saturation Voltage (IC=10mA, IE=0.3mA) (IC = 10 mA, IB = 5 mA) MMUN2130RLT1 MMUN2131RLT1 (IC = 10 mA, IB = 1 mA) MMUN2115RLT1 MMUN2116RLT1 MMUN2132RLT1 MMUN2133RLT1 MMUN2134RLT1 Output Voltage (on) (VCC=5.0V,VB=2.5V, RL=1.0k) MMUN2111RLT1 MMUN2112RLT1 MMUN2114RLT1 MMUN2115RLT1 MMUN2116RLT1 MMUN2130RLT1 MMUN2131RLT1 MMUN2132RLT1 MMUN2133RLT1 MMUN2134RLT1 (VCC =5.0V,VB=3.5V, RL= 1.0k) MMUN2113RLT1 2. New devices. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% 2-446 LRC Small-Signal Transistors, FETs and Diodes Device Data VCE(sat) VOL - Vdc 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Q1-2/7 LESHAN RADIO COMPANY, LTD. MMUN2111RLT1 SERIES ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol Output Voltage (off) (VCC= 5.0V, VB = 0.5 V, R L = 1.0k) VOH (VCC= 5.0V, VB = 0.25 V, RL =1.0k) MMUN2115RLT1 MMUN2116RLT1 MMUN2131RLT1 MMUN2132RLT1 (VCC=5.0 V,VB=0.050V,RL=1.0k) MMUN2130RLT1 Input Resistor MMUN2111RLT1 R1 MMUN2112RLT1 MMUN2113RLT1 MMUN2114RLT1 MMUN2115RLT1 MMUN2116RLT1 MMUN2130RLT1 MMUN2131RLT1 MMUN2132RLT1 MMUN2133RLT1 MMUN2134RLT1 Resistor Ratio MMUN2111RLT1 MMUN2112RLT1 MMUN2113RLT1 R 1 /R 2 MMUN2114RLT1 MMUN2115RLT1 MMUN2116RLT1 MMUN2130RLT1 MMUN2131RLT1 MMUN2132RLT1 MMUN2133RLT1 Min 4.9 Typ -- Max -- Unit Vdc 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 -- 0.8 0.055 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 -- 1.0 0.1 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 -- 1.2 0.185 k Q1-3/7 LESHAN RADIO COMPANY, LTD. MMUN2111RLT1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS MMUN2111RLT1 P D , POWER DISSIPATION (MILLIWATTS) 250 V CE( sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 I C /I B =10 200 T A = -25C 75C 25C 150 0.1 100 50 R JA = 625C/W 0 -50 0 50 10 150 0.01 0 20 40 60 80 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve h FE , DC CURRENT GAIN (NORMALIZED) I C , COLLECTOR CURRENT (mA) Figure 2. V CE(sat) versus I C 1000 4 V CE = 10 V C ob , CAPACITANCE (pF) f = 1 MHz l E= 0 V 3 T A = 25C T A =75C 100 25C -25C 2 1 10 1 10 100 0 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 3. DC Current Gain V R , REVERSE BIAS VOLTAGE (VOLTS) Figure 4. Output Capacitance 100 V in , INPUT VOLTAGE (VOLTS) 75C 25C T A = -25C 100 I C , COLLECTOR CURRENT (mA) V O = 0.2 V 10 1 10 T A = -25C 25C 75C 0.1 1 0.01 V O= 5 V 0.001 0 1 2 3 4 5 6 7 8 9 10 0.1 0 10 20 30 40 50 V in , INPUT VOLTAGE (VOLTS) Figure 5. Output Current versus Input Voltage I C , COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current Q1-4/7 LESHAN RADIO COMPANY, LTD. MMUN2111RLT1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS MMUN2112RLT1 10 h FE , DC CURRENT GAIN (NORMALIZED) V CE( sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1000 I C /I B =10 T A = -25C 25C 75C 1 V CE = 10 V T A =75C 25C 100 -25C 0.1 0.01 0 20 40 60 80 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. V CE(sat) versus I C 4 100 Figure 8. DC Current Gain f = 1 MHz 75C 25C T A = -25C C ob , CAPACITANCE (pF) 3 l E= 0 V T A = 25C I C , COLLECTOR CURRENT (mA) 10 1 2 0.1 1 0.01 V O= 5 V 0.001 0 1 2 3 4 5 6 7 8 9 10 0 0 10 20 30 40 50 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) V O = 0.2 V T A = -25C 10 25C 75C 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current Q1-5/7 LESHAN RADIO COMPANY, LTD. MMUN2111RLT1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS MMUN2113RLT1 1 h FE , DC CURRENT GAIN (NORMALIZED) V CE( sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1000 I C /I B =10 T A =75C 25C -25C 100 T A = -25C 25C 0.1 75C 0.01 0 10 20 30 40 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 12. V CE(sat) versus I C 1 100 Figure 13. DC Current Gain C ob , CAPACITANCE (pF) 0.8 I C , COLLECTOR CURRENT (mA) f = 1 MHz l E= 0 V T A = 25C T A = 75C 10 25C -25C 0.6 1 0.4 0.1 0.2 0.01 0.001 V O= 5 V 0 1 2 3 4 5 6 7 8 9 10 0 0 10 20 30 40 50 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) V O= 2 V T A=-25C 25C 10 75C 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current Q1-6/7 LESHAN RADIO COMPANY, LTD. MMUN2111RLT1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS MMUN2114RLT1 1 h FE , DC CURRENT GAIN (NORMALIZED) V CE( sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100 I C /I B =10 T A = -25C 25C 75C 0.1 V CE = 10V 25C -25C T A =75C 0.01 0 10 20 30 40 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. V CE(sat) versus I C 4.5 100 Figure 18. DC Current Gain I C , COLLECTOR CURRENT (mA) 4 C ob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 f = 1 MHz l E= 0 V T A= 25C T A = 75C 25C -25C 10 V O= 5 V 1 0 1 2 3 4 5 6 7 8 9 10 35 40 45 50 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 12 V V O = 0.2 V T A = -25C 25C V in , INPUT VOLTAGE (VOLTS) 75C 1 Typical Application for PNP BRTs LOAD 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source Q1-7/7 |
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